| (11) | Number of the document | 4868 |
| (21) | Number of the application | a 2021 0054 |
| (22) | Filing date of the application | 2021.08.06 |
| | Date of filing the request for examination | (de fond) 06.08.2021 |
| (71) | Name(s) of applicant(s), code of the country | INSTITUTIA PUBLICA UNIVERSITATEA TEHNICA A MOLDOVEI, MD; |
| (72) | Name(s) of inventor(s), code of the country | MONAICO Elena, MD; MONAICO Eduard, MD; URSACHI Veaceslav, MD; TIGHINEANU Ion, MD; |
| (73) | Name(s) of owner(s), code of the country | INSTITUTIA PUBLICA UNIVERSITATEA TEHNICA A MOLDOVEI, MD; |
| (54) | Title of the invention | Process for producing wide-band-gap semiconductor nanowires on a narrow-band-gap semiconductor substrate |
| (13) | Kind-of-document code | |
| (51) | International Patent Classification | B82B 1/00 (2011.01); B82B 3/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H01L 21/3063 (2011.01); H01L 21/477 (2011.01); |
| (19) | Country | MD |
| (41) | Date of publication of the application | 2023.02.28 |
| (45) | Date of publication of patent granting decision: | 2023.09.30 |
| (47) | Date of issuance of patent | 2024.04.30 |
| | Substantive examiner(s) | GHIŢU Irina Iurie, CERNEI Tatiana, SĂU Tatiana |
| | Payment for maintenance up to the date | 2026.08.06 |