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Created with Raphaël 2.1.0 25.07.1994 Formal examination (assignment of filing date) 31.01.1996 Publication of the application (A) 30.11.1996 Publication of the decision of grant (F2) 31.05.1997 Completion of the opposition filing period 30.06.1997 Issuance of patent (G2) 25.07.1997 Valid until 28.02.2001 Publication of the decision of forfeiture, the term of re-establishment has expired

Patent expired


(11)Number of the document627
(21)Number of the application94-0257
(22)Filing date of the application1994.07.25
 Date of filing the request for examination (pe raspunderea solicitantului) 02.02.1996
(71)Name(s) of applicant(s), code of the countryUNIVERSITATEA DE STAT DIN MOLDOVA, MD;
(72)Name(s) of inventor(s), code of the countryBOTNARIUC Vasile, MD; GORCEAC Leonid, MD; DIACOV Ion, MD; CHITOROAGA Andrei, MD; PLESCA Valentin, MD; RAEVSCHI Simion, MD;
(73)Name(s) of owner(s), code of the countryUNIVERSITATEA DE STAT DIN MOLDOVA, MD;
(54)Title of the inventionThe method of making epitaxy layers of phosphide indium from gaz phase
(13)Kind-of-document code
G2, BOPI 07/1997
F2, BOPI 11/1996
A, BOPI 01/1996
(51)International Patent Classification H01L 21/205 (2006.01);
(19)CountryMD
(41)Date of publication of the application1996.01.31
(45)Date of publication of patent granting decision:1996.11.30
(47)Date of issuance of patent1997.06.30
 Payment for maintenance up to the date1997.07.25
 Date of patent termination1997.07.25
 Date of publication of the termination of patent, with the right of restoration2000.06.30
 Date of publication of the termination of patent, without the right of restoration2001.02.28
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