| (11) | Number of the document | 3257 |
| (21) | Number of the application | a 2006 0083 |
| (22) | Filing date of the application | 2006.03.17 |
| | Date of filing the request for examination | (de fond) 02.06.2006 |
| (71) | Name(s) of applicant(s), code of the country | FIRMA DE PRODUCTIE SI COMERT "DISCRET ELEMENT" SRL, MD; |
| (72) | Name(s) of inventor(s), code of the country | BARANOV Simion, MD; CINIC Boris, MD; REDWING Joan, US; |
| (73) | Name(s) of owner(s), code of the country | FIRMA DE PRODUCTIE SI COMERT "DISCRET ELEMENT" SRL, MD; |
| (54) | Title of the invention | Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 |
| (13) | Kind-of-document code | |
| (51) | International Patent Classification | C22B 5/02 (2006.01); C22B 5/10 (2006.01); C22B 5/12 (2006.01); C22B 5/16 (2006.01); C22B 30/04 (2006.01); C22B 58/00 (2006.01); B09B 3/00 (2006.01); |
| (19) | Country | MD |
| (45) | Date of publication of patent granting decision: | 2007.02.28 |
| (47) | Date of issuance of patent | 2007.10.31 |
| | Substantive examiner(s) | CIOCÂRLAN Alexandru |
| | Payment for maintenance up to the date | 2011.03.17 |
| | Date of patent termination | 2011.03.17 |
| | Date of publication of the termination of patent, with the right of restoration | 2011.10.31 |
| | Date of publication of the termination of patent, without the right of restoration | 2012.09.30 |