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Created with Raphaël 2.1.0 06.11.2007 Formal examination (assignment of filing date) 23.05.2008 Preliminary and substantive examination 31.01.2009 Publication of the decision of grant (F1) 31.07.2009 Completion of the opposition filing period 31.08.2009 Issuance of patent (G2) 06.11.2012 Valid until 31.05.2014 Publication of the decision of forfeiture, the term of re-establishment has expired

Patent lapsed


(11)Number of the document3811
(21)Number of the applicationa 2007 0303
(22)Filing date of the application2007.11.06
 Date of filing the request for examination (pe raspunderea solicitantului) 06.11.2007
(71)Name(s) of applicant(s), code of the countryINSTITUTUL DE FIZICA APLICATA AL ACADEMIEI DE STIINTE A MOLDOVEI, MD; UNIVERSITATEA TEHNICA A MOLDOVEI, MD;
(72)Name(s) of inventor(s), code of the countryMONAICO Eduard, MD; TIGHINEANU Ion, MD; URSACHI Veaceslav, MD; POSTOLACHE Vitalie, MD;
(73)Name(s) of owner(s), code of the countryINSTITUTUL DE FIZICA APLICATA AL ACADEMIEI DE STIINTE A MOLDOVEI, MD; UNIVERSITATEA TEHNICA A MOLDOVEI, MD;
(54)Title of the inventionProcess for obtaining semiconductor nanostructural zones
(13)Kind-of-document code
G2, BOPI 09/2009
F1, BOPI 01/2009
(51)International Patent Classification B82B 3/00 (2006.01); C25F 3/12 (2006.01); H01L 21/3063 (2006.01); C01D 3/04 (2006.01);
(19)CountryMD
(45)Date of publication of patent granting decision:2009.01.31
(47)Date of issuance of patent2009.09.30
(74)Patent attorneyANISIMOVA Liudmila, Bd. Ştefan cel Mare nr. 128, ap. 24, MD-2012, Chişinău, Republica Moldova
 Substantive examiner(s)COLESNIC Inesa
 Payment for maintenance up to the date2012.11.06
 Date of patent termination2012.11.06
 Date of publication of the termination of patent, with the right of restoration2013.06.30
 Date of publication of the termination of patent, without the right of restoration2014.05.31
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